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<br /> <br /> <br /> <br /> 市场领先的<br /> 晶圆级光学器件制造设备<br /> <br /> 纳米压印光刻、透镜成型/堆叠、<br /> 晶圆键合及测量。<br /> 高性能设备与EVG 纳米压印光子技术中心相结合，<br /> 确保短时间投入市场。<br /> 可实现3D /深度传感器、<br /> 生物识别身份验证及 AR / VR显示器。<br /> 请和我们联系，我们关注你们的需求!<br /> www.EVGroup.comEVG® HERCULES® NIL<br /> （右上角） ISSN to be assigned<br /> semiconductorTODAY<br /> 面向亚洲中文读者的化合物及先进硅半导体新闻杂志 A S I A<br /> 2019 第 8 卷第 3 期 www.semiconductor-today.com<br /> 博世公司开发碳化硅<br /> 芯片，瞄准电动汽车<br /> / 混合动力汽车的<br /> 电力电子产品<br /> 博世公司开发碳化硅芯片，瞄准电动汽车 / 混合动力汽车的电力电子产品·<br /> CompoundPhotonics与Plessey合作开发用于AR/MR应用的micro-LED显示器·<br /> Lumentum 将意大利铌酸锂基产品线剥离给中国的 AFR<br /> <br /> <br /> <br /> <br /> 市场领先的<br /> 晶圆级光学器件制造设备<br /> <br /> 纳米压印光刻、透镜成型/堆叠、<br /> 晶圆键合及测量。<br /> 高性能设备与EVG 纳米压印光子技术中心相结合，<br /> 确保短时间投入市场。<br /> 可实现3D /深度传感器、<br /> 生物识别身份验证及 AR / VR显示器。<br /> 请和我们联系，我们关注你们的需求!<br /> <a title="Semiconductor Today Asia 2019 (3) page 1" href="https://secure.viewer.zmags.com/publication/011521a3?page=1"> 市场领先的 晶圆</a> <a title="Semiconductor Today Asia 2019 (3) page 2" href="https://secure.viewer.zmags.com/publication/011521a3?page=2"> （右上角） ISSN to be assigned semiconductorTODAY 面向亚洲</a> <a title="Semiconductor Today Asia 2019 (3) page 3" href="https://secure.viewer.zmags.com/publication/011521a3?page=3"> 市场领先的 晶圆</a> <a title="Semiconductor Today Asia 2019 (3) page 4" href="https://secure.viewer.zmags.com/publication/011521a3?page=4"> 3 目录 contents 新闻 News 市场 Markets </a> <a title="Semiconductor Today Asia 2019 (3) page 5" href="https://secure.viewer.zmags.com/publication/011521a3?page=5"> 4 社论 editorial 欢迎阅读最新一期的《今日半导体亚洲版》 欢迎阅读最新一期的今日</a> <a title="Semiconductor Today Asia 2019 (3) page 6" href="https://secure.viewer.zmags.com/publication/011521a3?page=6"> </a> <a title="Semiconductor Today Asia 2019 (3) page 7" href="https://secure.viewer.zmags.com/publication/011521a3?page=7"> 6 新闻 news 从现在到2027年, GaN衬底市场将以10％ 的复合年增长 根据Transp</a> <a title="Semiconductor Today Asia 2019 (3) page 8" href="https://secure.viewer.zmags.com/publication/011521a3?page=8"> 新闻：市场 News: Markets 7 </a> <a title="Semiconductor Today Asia 2019 (3) page 9" href="https://secure.viewer.zmags.com/publication/011521a3?page=9"> 8 新闻：宽能隙电子产品 News: Wide-bandgap electronics 博世</a> <a title="Semiconductor Today Asia 2019 (3) page 10" href="https://secure.viewer.zmags.com/publication/011521a3?page=10"> 新闻：宽能隙电子产品 News: Wide-bandgap electronics 9 Cr</a> <a title="Semiconductor Today Asia 2019 (3) page 11" href="https://secure.viewer.zmags.com/publication/011521a3?page=11"> 10 新闻：材料与工艺设备 News: Materials and processing equ</a> <a title="Semiconductor Today Asia 2019 (3) page 12" href="https://secure.viewer.zmags.com/publication/011521a3?page=12"> 新闻：光电子 News: Optoelectronics 11 CompoundPhoton</a> <a title="Semiconductor Today Asia 2019 (3) page 13" href="https://secure.viewer.zmags.com/publication/011521a3?page=13"> 12 技术聚焦: 光伏 弗劳恩霍夫ISE创下了硅基单 片三结太阳能电池的效率记录 晶圆键合电池</a> <a title="Semiconductor Today Asia 2019 (3) page 14" href="https://secure.viewer.zmags.com/publication/011521a3?page=14"> (Fraunhofer) ISE推出了这种太阳能电 池, 效率达到22.3％。 在迈向单片多结光</a> <a title="Semiconductor Today Asia 2019 (3) page 15" href="https://secure.viewer.zmags.com/publication/011521a3?page=15"> 14 市场聚焦: LED制造 过去18个月中，Micro-LED技术 取得了重大进展 但是在大</a> <a title="Semiconductor Today Asia 2019 (3) page 16" href="https://secure.viewer.zmags.com/publication/011521a3?page=16"> 市场聚焦：LED制造 15 对</a> <a title="Semiconductor Today Asia 2019 (3) page 17" href="https://secure.viewer.zmags.com/publication/011521a3?page=17"> 16 技术聚焦：GaN HEMT器件 应变氮化镓中的高载流子密度二维空穴气 p沟道晶体管的开发</a> <a title="Semiconductor Today Asia 2019 (3) page 18" href="https://secure.viewer.zmags.com/publication/011521a3?page=18"> 技术聚焦：GaN HEMT器件 17 </a> <a title="Semiconductor Today Asia 2019 (3) page 19" href="https://secure.viewer.zmags.com/publication/011521a3?page=19"> 18 技术聚焦：碳化硅 碳化硅600V晶体管可媲美硅的性能 据研究人员称，高频性能指标超过了英飞</a> <a title="Semiconductor Today Asia 2019 (3) page 20" href="https://secure.viewer.zmags.com/publication/011521a3?page=20"> 图2: (a）分别在20V和15V栅极电势下55nm和27nm栅极氧化物MOSFET的Ron,sp</a> <a title="Semiconductor Today Asia 2019 (3) page 21" href="https://secure.viewer.zmags.com/publication/011521a3?page=21"> 20 技术聚焦：碳化硅 三菱电机开发出具有电场限制结 构的沟槽型SiCMOSFET 细化目标</a> <a title="Semiconductor Today Asia 2019 (3) page 22" href="https://secure.viewer.zmags.com/publication/011521a3?page=22"> 更多的单元。然而, 如果栅电极之间的 晶体管间隔太窄, 则电流变得困难并 且器件电阻率增加。由于三</a> <a title="Semiconductor Today Asia 2019 (3) page 23" href="https://secure.viewer.zmags.com/publication/011521a3?page=23"> 22 市场聚焦：III-V族工艺 铟镓砷单晶体管动态随机存 取存储器 研究人员希望器件具有更</a> <a title="Semiconductor Today Asia 2019 (3) page 24" href="https://secure.viewer.zmags.com/publication/011521a3?page=24"> 技术聚焦：III-V族工艺 23 </a> <a title="Semiconductor Today Asia 2019 (3) page 25" href="https://secure.viewer.zmags.com/publication/011521a3?page=25"> www.semiconductor-today.com </a>