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<br /> （右上角） ISSN to be assigned<br /> semiconductorTODAY<br /> 面向亚洲中文读者的化合物及先进硅半导体新闻杂志 A S I A<br /> 2016 第 5 卷第 2 期 www.semiconductor-today.com<br /> 分谱，四结器件更接<br /> 近太阳能电池的效<br /> 率理论极限<br /> 由高性能器件需求的推动，外延沉积市场以11.54％的复合年增长率增长到2020年·<br /> Aixtron同意由福建大芯片投资基金以6.7亿欧元收购·<br /> VonArdenne提供CIGS和CdTe薄膜光伏镀膜系统给中国建材公司的子公司<br /> <br /> Lower Cost LEDs<br /> Faster LED Adoption<br /> Another breakthrough from Veeco. This time it’s EPIK.<br /> Introducing Veeco’s new TurboDisc® EPIK700™ GaN MOCVD system<br /> As global consumption for LED general lighting accelerates, manufacturers need bigger, better<br /> MOCVD technology solutions that increase productivity and lower manufacturing costs.<br /> The EPIK700 MOCVD system combines Veeco’s award-winning TurboDisc reactor design with<br /> improved wafer uniformity, increased productivity and reduced operations expenses to enable<br /> a cost per wafer savings of up to 20 pe<a title="Semiconductor Today Asia 2016 (2) page 1" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=1"> （右上角） ISSN to be assigned semiconductorTODAY 面向亚洲</a> <a title="Semiconductor Today Asia 2016 (2) page 2" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=2"> Lower Cost LEDs Faster LED Adoption Another br</a> <a title="Semiconductor Today Asia 2016 (2) page 3" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=3"> 3 目录 contents 新闻 News 市场 Markets </a> <a title="Semiconductor Today Asia 2016 (2) page 4" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=4"> 4 社论 editorial 欢迎阅读最新一期的《今日半导体亚洲版》 欢迎阅读最新一期的今日</a> <a title="Semiconductor Today Asia 2016 (2) page 5" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=5"> 针对高亮度LED 的溅射解决方 案就在这里 想像—下有这样一台溅射设备，它能同时灵活应用于溅镀电流</a> <a title="Semiconductor Today Asia 2016 (2) page 6" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=6"> 6 新闻 news LED市场以近17％的年均复合增长率增长， 增长到2020年 LED在新兴国家</a> <a title="Semiconductor Today Asia 2016 (2) page 7" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=7"> 新闻：微电子 News: Microelectronics 7 TowerJazz开始量产为</a> <a title="Semiconductor Today Asia 2016 (2) page 8" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=8"> 8 新闻：宽能隙电子产品 News: Wide-bandgap electronics Acc</a> <a title="Semiconductor Today Asia 2016 (2) page 9" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=9"> 新闻：宽能隙电子产品 News: Wide-bandgap electronics 9 IQ</a> <a title="Semiconductor Today Asia 2016 (2) page 10" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=10"> 10 新闻：材料与工艺设备 News: Materials and processing eq</a> <a title="Semiconductor Today Asia 2016 (2) page 11" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=11"> 新闻：材料与工艺设备 News: Materials and processing equip</a> <a title="Semiconductor Today Asia 2016 (2) page 12" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=12"> 12 新闻：LEDs News: LEDs Cree公司结束专利纠纷, 达成许可协议 位于</a> <a title="Semiconductor Today Asia 2016 (2) page 13" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=13"> 新闻：LEDs News: LEDs 13 Pick y</a> <a title="Semiconductor Today Asia 2016 (2) page 14" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=14"> 14 新闻：光通信 News: Optical communications 欧洲光电产业协</a> <a title="Semiconductor Today Asia 2016 (2) page 15" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=15"> 新闻：LEDs News: LEDs 15 </a> <a title="Semiconductor Today Asia 2016 (2) page 16" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=16"> 16 新闻：光伏 News: Photovoltaics 新南威尔士大学提高未聚光太阳能电池的</a> <a title="Semiconductor Today Asia 2016 (2) page 17" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=17"> 新闻：光伏 News: Photovoltaics 17 Avancis创下17.9％的封装C</a> <a title="Semiconductor Today Asia 2016 (2) page 18" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=18"> 18 技术聚焦：激光器 硅衬底上的I-V族量子点激光器的直接生长 研究人员声称这是具有高温性能可</a> <a title="Semiconductor Today Asia 2016 (2) page 19" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=19"> 技术聚焦：激光器 19 峰宽约1300nm和全 宽峰29meV的波长峰 (0.95eV)。 波</a> <a title="Semiconductor Today Asia 2016 (2) page 20" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=20"> 20 技术聚焦：LED制造 共面制作的铟镓氮发光二极管 较简单的技术减少了光刻和金属沉积的 步</a> <a title="Semiconductor Today Asia 2016 (2) page 21" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=21"> 技术聚焦：LED制造 21 研究人员评论道:“尽管发光区域限 制在100微米直径的内圆内, 正</a> <a title="Semiconductor Today Asia 2016 (2) page 22" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=22"> 22 技术聚焦：LED制造 氮化镓发光二极管，光电二极管和波导 将器件集成到硅上可能会带来用于</a> <a title="Semiconductor Today Asia 2016 (2) page 23" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=23"> 技术聚焦：LED制造 23 10μm。硅的去除避 免了衬底材料的光吸 收。 在注入电流下波导的</a> <a title="Semiconductor Today Asia 2016 (2) page 24" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=24"> 24 技术聚焦：LED制造 在金属箔上制成的铝镓氮纳米线 UV LED 研究人员认为此次开发是</a> <a title="Semiconductor Today Asia 2016 (2) page 25" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=25"> 技术聚焦：LED制造 25 美 国的俄亥俄州立大学在柔 性金属箔上制作出了铝 </a> <a title="Semiconductor Today Asia 2016 (2) page 26" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=26"> 26 技术聚焦：功率半导体 HRL实验室宣称制作出了第一支 氮化镓CMOS晶体管 研究人员还创</a> <a title="Semiconductor Today Asia 2016 (2) page 27" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=27"> 技术聚焦：功率半导体 27 极沟槽的低能量等离子刻蚀, AlN/SiN栅极介电叠层MOCVD 生</a> <a title="Semiconductor Today Asia 2016 (2) page 28" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=28"> 28 技术聚焦：功率半导体 生长在硅衬底上的完全垂直的氮 化镓p-i-n二极管 研究人员宣称是具</a> <a title="Semiconductor Today Asia 2016 (2) page 29" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=29"> 技术聚焦：功率半导体 29 </a> <a title="Semiconductor Today Asia 2016 (2) page 30" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=30"> 30 市场聚焦: RF器件 氮化镓射频器件市场以14％的年均复 合增长率增长，到2022年年底增</a> <a title="Semiconductor Today Asia 2016 (2) page 31" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=31"> 市场聚焦: RF器件 31 硅上GaN在LTE中， 卫星通信，CATV及 RF能源中获得机会; </a> <a title="Semiconductor Today Asia 2016 (2) page 32" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=32"> 32 技术聚焦：InGaAs FETs 用作射频开关的铟镓砷MOSFET 中国的研究人员看到未</a> <a title="Semiconductor Today Asia 2016 (2) page 33" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=33"> 技术聚焦：InGaAs FETs 33 图2. (a)</a> <a title="Semiconductor Today Asia 2016 (2) page 34" href="https://secure.viewer.zmags.com/publication/1a39a2a9?page=34"> ISSN 1752-2935 (online) semiconductorTODAY COMP</a>