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<br /> （右上角） ISSN to be assigned<br /> semiconductorTODAY<br /> 面向亚洲中文读者的化合物及先进硅半导体新闻杂志 A S I A<br /> 2017 第 6 卷第 3 期 www.semiconductor-today.com<br /> Veeco 新的 GENxcel<br /> MBE 系统获得了第<br /> 一个订单<br /> 2017年中国LED芯片供应商占了全球产能的54％·<br /> Navitas宣布与台积电以及Amkor的制造合作伙伴关系·<br /> SourcePhotonics公司将在中国新建一座工厂，将InP激光器产能提高一倍<br /> Lower Cost LEDs<br /> Faster LED Adoption<br /> Another breakthrough from Veeco. This time it’s EPIK.<br /> Introducing Veeco’s new TurboDisc® EPIK700™ GaN MOCVD system<br /> As global consumption for LED general lighting accelerates, manufacturers need bigger, better<br /> MOCVD technology solutions that increase productivity and lower manufacturing costs.<br /> The EPIK700 MOCVD system combines Veeco’s award-winning TurboDisc reactor design with<br /> improved wafer uniformity, increased productivity and reduced operations expenses to enable<br /> a cost per wafer savings of up to 20 percent comp<a title="Semiconductor Today Asia 2017 (3) page 1" href="https://secure.viewer.zmags.com/publication/48090026?page=1"> （右上角） ISSN to be assigned semiconductorTODAY 面向亚洲</a> <a title="Semiconductor Today Asia 2017 (3) page 2" href="https://secure.viewer.zmags.com/publication/48090026?page=2"> Lower Cost LEDs Faster LED Adoption Another br</a> <a title="Semiconductor Today Asia 2017 (3) page 3" href="https://secure.viewer.zmags.com/publication/48090026?page=3"> 3 目录 contents 新闻 News 市场 Markets </a> <a title="Semiconductor Today Asia 2017 (3) page 4" href="https://secure.viewer.zmags.com/publication/48090026?page=4"> 4 社论 editorial 欢迎阅读最新一期的《今日半导体亚洲版》 欢迎阅读最新一期的今日</a> <a title="Semiconductor Today Asia 2017 (3) page 5" href="https://secure.viewer.zmags.com/publication/48090026?page=5"> </a> <a title="Semiconductor Today Asia 2017 (3) page 6" href="https://secure.viewer.zmags.com/publication/48090026?page=6"> 6 新闻 news 2017年中国LED芯片供应商占了全球产能的54％ 对LED封装企业的补贴推动</a> <a title="Semiconductor Today Asia 2017 (3) page 7" href="https://secure.viewer.zmags.com/publication/48090026?page=7"> 新闻：市场 News: Markets 7 2017年第二季度，中国的国星光电进入LED 封</a> <a title="Semiconductor Today Asia 2017 (3) page 8" href="https://secure.viewer.zmags.com/publication/48090026?page=8"> 8 新闻：宽能隙电子产品 News: Wide-bandgap electronics 稳</a> <a title="Semiconductor Today Asia 2017 (3) page 9" href="https://secure.viewer.zmags.com/publication/48090026?page=9"> 新闻：宽能隙电子产品 News: Wide-bandgap electronics 9 Na</a> <a title="Semiconductor Today Asia 2017 (3) page 10" href="https://secure.viewer.zmags.com/publication/48090026?page=10"> 10 新闻：材料与工艺设备 News: Materials and processing eq</a> <a title="Semiconductor Today Asia 2017 (3) page 11" href="https://secure.viewer.zmags.com/publication/48090026?page=11"> 新闻：光通信 News: Optical communications 11 Veeco新的</a> <a title="Semiconductor Today Asia 2017 (3) page 12" href="https://secure.viewer.zmags.com/publication/48090026?page=12"> 12 新闻：光通信 News: Optical communications 财报显示其第三</a> <a title="Semiconductor Today Asia 2017 (3) page 13" href="https://secure.viewer.zmags.com/publication/48090026?page=13"> 新闻：LEDs News: LEDs 13 。 。 ww</a> <a title="Semiconductor Today Asia 2017 (3) page 14" href="https://secure.viewer.zmags.com/publication/48090026?page=14"> 14 技术聚焦：激光器 绝缘体上硅衬底上的铟镓砷磷量子阱 直接生长在V形槽中的水平纳米线发出约</a> <a title="Semiconductor Today Asia 2017 (3) page 15" href="https://secure.viewer.zmags.com/publication/48090026?page=15"> 技术聚焦：激光器 15 最后是650℃生长的InGaAsP多量 子阱和400nm的InP帽层 (</a> <a title="Semiconductor Today Asia 2017 (3) page 16" href="https://secure.viewer.zmags.com/publication/48090026?page=16"> 16 技术聚焦：激光器 近紫外激光二极管为可见 (白色) 光通信供电 研究人员使用红-绿-蓝</a> <a title="Semiconductor Today Asia 2017 (3) page 17" href="https://secure.viewer.zmags.com/publication/48090026?page=17"> 技术聚焦：激光器 17 图2：（a</a> <a title="Semiconductor Today Asia 2017 (3) page 18" href="https://secure.viewer.zmags.com/publication/48090026?page=18"> 18 技术聚焦：LED制造 来自应变设计纳米柱的单个红 -绿-蓝InGaN像素 通向未来基于L</a> <a title="Semiconductor Today Asia 2017 (3) page 19" href="https://secure.viewer.zmags.com/publication/48090026?page=19"> 技术聚焦：LED制造 23 Pick your size.</a> <a title="Semiconductor Today Asia 2017 (3) page 20" href="https://secure.viewer.zmags.com/publication/48090026?page=20"> 20 技术聚焦：LED制造 引起的效率降低。在这 种效应中III族氮化物 键的电荷极化产生趋向 </a> <a title="Semiconductor Today Asia 2017 (3) page 21" href="https://secure.viewer.zmags.com/publication/48090026?page=21"> 技术聚焦：激光器 25 Guiding processing forward </a> <a title="Semiconductor Today Asia 2017 (3) page 22" href="https://secure.viewer.zmags.com/publication/48090026?page=22"> 22 技术聚焦：LED制造 氮化镓发光二极管的硅注入 器件发出了~450nm波长的蓝光单一光谱峰</a> <a title="Semiconductor Today Asia 2017 (3) page 23" href="https://secure.viewer.zmags.com/publication/48090026?page=23"> 技术聚焦：LED制造 23 </a> <a title="Semiconductor Today Asia 2017 (3) page 24" href="https://secure.viewer.zmags.com/publication/48090026?page=24"> 24 技术聚焦：功率半导体 迈向与硅CMOS的氮化镓集成 研究人员使用绝缘体衬底上的多个晶体</a> <a title="Semiconductor Today Asia 2017 (3) page 25" href="https://secure.viewer.zmags.com/publication/48090026?page=25"> 技术聚焦：功率半导体 25 图2. 来自各种窗口尺 寸的GaN HEMT的电 子迁移率和漏极电</a> <a title="Semiconductor Today Asia 2017 (3) page 26" href="https://secure.viewer.zmags.com/publication/48090026?page=26"> www.semiconductor-today.com </a>