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<br /> （右上角） ISSN to be assigned<br /> semiconductorTODAY<br /> 面向亚洲中文读者的化合物及先进硅半导体新闻杂志 A S I A<br /> 2016 第 5 卷第 3 期 www.semiconductor-today.com<br /> 威斯康星大学麦迪<br /> 逊分校称第一支碳<br /> 纳米管晶体管比硅<br /> 表现好<br /> GaN器件市场将以17％的复合年增长率到2024年增长到34.384亿美元·<br /> 科罗拉多大学博尔德分校开发出了室温原子层沉积的方法·<br /> Rubicon 在 2016 年年底关闭其马来西亚的工厂·<br /> <br /> Lower Cost LEDs<br /> Faster LED Adoption<br /> Another breakthrough from Veeco. This time it’s EPIK.<br /> Introducing Veeco’s new TurboDisc® EPIK700™ GaN MOCVD system<br /> As global consumption for LED general lighting accelerates, manufacturers need bigger, better<br /> MOCVD technology solutions that increase productivity and lower manufacturing costs.<br /> The EPIK700 MOCVD system combines Veeco’s award-winning TurboDisc reactor design with<br /> improved wafer uniformity, increased productivity and reduced operations expenses to enable<br /> a cost per wafer sav<a title="Semiconductor Today Asia 2016 (3) page 1" href="https://secure.viewer.zmags.com/publication/5339b169?page=1"> （右上角） ISSN to be assigned semiconductorTODAY 面向亚洲</a> <a title="Semiconductor Today Asia 2016 (3) page 2" href="https://secure.viewer.zmags.com/publication/5339b169?page=2"> Lower Cost LEDs Faster LED Adoption Another br</a> <a title="Semiconductor Today Asia 2016 (3) page 3" href="https://secure.viewer.zmags.com/publication/5339b169?page=3"> 3 目录 contents 新闻 News 市场 Markets </a> <a title="Semiconductor Today Asia 2016 (3) page 4" href="https://secure.viewer.zmags.com/publication/5339b169?page=4"> 4 社论 editorial 欢迎阅读最新一期的《今日半导体亚洲版》 欢迎阅读最新一期的今日</a> <a title="Semiconductor Today Asia 2016 (3) page 5" href="https://secure.viewer.zmags.com/publication/5339b169?page=5"> 针对高亮度LED 的溅射解决方 案就在这里 想像—下有这样一台溅射设备，它能同时灵活应用于溅镀电流</a> <a title="Semiconductor Today Asia 2016 (3) page 6" href="https://secure.viewer.zmags.com/publication/5339b169?page=6"> 6 新闻 news 日亚位列封装LED供应商年收入的首位, 拥有 12.9％的市场份额, 其次是欧</a> <a title="Semiconductor Today Asia 2016 (3) page 7" href="https://secure.viewer.zmags.com/publication/5339b169?page=7"> 新闻：微电子 News: Microelectronics 7 威斯康星大学麦迪逊分校称第一</a> <a title="Semiconductor Today Asia 2016 (3) page 8" href="https://secure.viewer.zmags.com/publication/5339b169?page=8"> 8 新闻：宽能隙电子产品 News: Wide-bandgap electronics Per</a> <a title="Semiconductor Today Asia 2016 (3) page 9" href="https://secure.viewer.zmags.com/publication/5339b169?page=9"> 新闻：宽能隙电子产品 News: Wide-bandgap electronics 9 Ep</a> <a title="Semiconductor Today Asia 2016 (3) page 10" href="https://secure.viewer.zmags.com/publication/5339b169?page=10"> 10 新闻：材料与工艺设备 News: Materials and processing eq</a> <a title="Semiconductor Today Asia 2016 (3) page 11" href="https://secure.viewer.zmags.com/publication/5339b169?page=11"> 新闻：材料与工艺设备 News: Materials and processing equip</a> <a title="Semiconductor Today Asia 2016 (3) page 12" href="https://secure.viewer.zmags.com/publication/5339b169?page=12"> 12 新闻：LEDs News: LEDs Rubicon在2016年年底关闭其马来西亚的工</a> <a title="Semiconductor Today Asia 2016 (3) page 13" href="https://secure.viewer.zmags.com/publication/5339b169?page=13"> 新闻：光通信 News: Optical communications 13 4WDMMSA集</a> <a title="Semiconductor Today Asia 2016 (3) page 14" href="https://secure.viewer.zmags.com/publication/5339b169?page=14"> 14 新闻：光伏 News: Photovoltaics 麻省理工学院和Masdar开发了光伏</a> <a title="Semiconductor Today Asia 2016 (3) page 15" href="https://secure.viewer.zmags.com/publication/5339b169?page=15"> 新闻：LEDs News: LEDs 15 </a> <a title="Semiconductor Today Asia 2016 (3) page 16" href="https://secure.viewer.zmags.com/publication/5339b169?page=16"> 16 新闻：光伏 News: Photovoltaics AVANCIS和Sunpartner</a> <a title="Semiconductor Today Asia 2016 (3) page 17" href="https://secure.viewer.zmags.com/publication/5339b169?page=17"> 新闻：光伏 News: Photovoltaics 17 </a> <a title="Semiconductor Today Asia 2016 (3) page 18" href="https://secure.viewer.zmags.com/publication/5339b169?page=18"> 18 技术聚焦：光伏 柔性超薄砷化镓光伏器件 研究人员认为该器件可用在眼镜和/或织物上作为电源。</a> <a title="Semiconductor Today Asia 2016 (3) page 19" href="https://secure.viewer.zmags.com/publication/5339b169?page=19"> 两个途径。 通过170℃下 (图2) 施加 20分钟~80kPa的压力, 微电池通过'冷键合</a> <a title="Semiconductor Today Asia 2016 (3) page 20" href="https://secure.viewer.zmags.com/publication/5339b169?page=20"> 20 技术聚焦：III-V族工艺 在晶片键合的InP/Si衬底上的激光二极 管的外延生长 技术</a> <a title="Semiconductor Today Asia 2016 (3) page 21" href="https://secure.viewer.zmags.com/publication/5339b169?page=21"> 技术聚焦：III-V族工艺 21 通过MOVPE在n-型 (100) InP 上生长GaIn</a> <a title="Semiconductor Today Asia 2016 (3) page 22" href="https://secure.viewer.zmags.com/publication/5339b169?page=22"> 22 技术聚焦：III-V族工艺 光泵浦的III-V器件转移压印在硅绝缘体上 研究者声称这是II</a> <a title="Semiconductor Today Asia 2016 (3) page 23" href="https://secure.viewer.zmags.com/publication/5339b169?page=23"> 技术聚焦：III-V族工艺 23 </a> <a title="Semiconductor Today Asia 2016 (3) page 24" href="https://secure.viewer.zmags.com/publication/5339b169?page=24"> 24 技术聚焦：氮化物工艺 晶片键合集成硅, 砷化镓, 以及氮化镓 研究人员期待集成缩小的C</a> <a title="Semiconductor Today Asia 2016 (3) page 25" href="https://secure.viewer.zmags.com/publication/5339b169?page=25"> 技术聚焦：氮化物工艺 25 图2：三键合层转移工艺流方案。 最终载体晶片包括(111)硅上GaN</a> <a title="Semiconductor Today Asia 2016 (3) page 26" href="https://secure.viewer.zmags.com/publication/5339b169?page=26"> 26 技术聚焦：激光器 黄绿光铟镓氮量子点激光器 研究人员声称“绿光鸿沟”垂直腔面发射激光器第</a> <a title="Semiconductor Today Asia 2016 (3) page 27" href="https://secure.viewer.zmags.com/publication/5339b169?page=27"> 技术聚焦：激光器 27 量子点密度约为1.5x1010/cm2。电子显 微镜分析得到的量子点的直</a> <a title="Semiconductor Today Asia 2016 (3) page 28" href="https://secure.viewer.zmags.com/publication/5339b169?page=28"> 28 技术聚焦：氮化物材料 钠通量技术制作自支撑的氮化镓衬底 研究人员开发了液相外延法既生长Ga</a> <a title="Semiconductor Today Asia 2016 (3) page 29" href="https://secure.viewer.zmags.com/publication/5339b169?page=29"> 技术聚焦：氮化物材料 29 </a> <a title="Semiconductor Today Asia 2016 (3) page 30" href="https://secure.viewer.zmags.com/publication/5339b169?page=30"> 30 技术聚焦：LED制造 单片能带工程设计的半极性白光发光二极管 掺杂分布用于红移光学泵浦的长</a> <a title="Semiconductor Today Asia 2016 (3) page 31" href="https://secure.viewer.zmags.com/publication/5339b169?page=31"> 技术聚焦：LED制造 31 模拟表明相比于短波长QW, 长波长 QW从内建和偏振极化电场的红移</a> <a title="Semiconductor Today Asia 2016 (3) page 32" href="https://secure.viewer.zmags.com/publication/5339b169?page=32"> 32 技术聚焦：氮化物工艺 具有氧化锌中间层的氮化镓的全晶片 的化学剥离 该技术能够带来更好质</a> <a title="Semiconductor Today Asia 2016 (3) page 33" href="https://secure.viewer.zmags.com/publication/5339b169?page=33"> 技术聚焦：氮化物工艺 33 研究人员报道:“剥离后, 衬底和GaN 层都呈镜状表面, 尽管在</a> <a title="Semiconductor Today Asia 2016 (3) page 34" href="https://secure.viewer.zmags.com/publication/5339b169?page=34"> ISSN 1752-2935 (online) semiconductorTODAY COMP</a>