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<br /> （右上角） ISSN to be assigned<br /> semiconductorTODAY<br /> 面向亚洲中文读者的化合物及先进硅半导体新闻杂志 A S I A<br /> 2017/2018 第 6 卷第 4 期 www.semiconductor-today.com<br /> 在 InGaN 中掺入硼可<br /> 以提高大功率 LED<br /> 的效率<br /> 由于中国供应商的产能扩张，LED 芯片市场将在 2018 年实现供需平衡·<br /> 聚灿光电订购 Veeco 的 EPIK 868 MOCVD 系统以提高大批量 LED 生产·<br /> 苹果公司向 Finisar 投资 3.9 亿美元，用于增加 VCSEL 的产量<br /> Lower Cost LEDs<br /> Faster LED Adoption<br /> Another breakthrough from Veeco. This time it’s EPIK.<br /> Introducing Veeco’s new TurboDisc® EPIK700™ GaN MOCVD system<br /> As global consumption for LED general lighting accelerates, manufacturers need bigger, better<br /> MOCVD technology solutions that increase productivity and lower manufacturing costs.<br /> The EPIK700 MOCVD system combines Veeco’s award-winning TurboDisc reactor design with<br /> improved wafer uniformity, increased productivity and reduced operations expenses to enable<br /> a cost per wafer savin<a title="Semiconductor Today Asia 2017-2018 (4) page 1" href="https://secure.viewer.zmags.com/publication/68036223?page=1"> （右上角） ISSN to be assigned semiconductorTODAY 面向亚洲</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 2" href="https://secure.viewer.zmags.com/publication/68036223?page=2"> Lower Cost LEDs Faster LED Adoption Another br</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 3" href="https://secure.viewer.zmags.com/publication/68036223?page=3"> 3 目录 contents 新闻 News 市场 Markets </a> <a title="Semiconductor Today Asia 2017-2018 (4) page 4" href="https://secure.viewer.zmags.com/publication/68036223?page=4"> 4 社论 editorial 欢迎阅读最新一期的《今日半导体亚洲版》 欢迎阅读最新一期的今日</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 5" href="https://secure.viewer.zmags.com/publication/68036223?page=5"> </a> <a title="Semiconductor Today Asia 2017-2018 (4) page 6" href="https://secure.viewer.zmags.com/publication/68036223?page=6"> 6 新闻 news 由于中国供应商的产能扩张，LED芯片市场将在 2018年实现供需平衡 价格走高</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 7" href="https://secure.viewer.zmags.com/publication/68036223?page=7"> 新闻：宽能隙电子产品 News: Wide-bandgap electronics 7 De</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 8" href="https://secure.viewer.zmags.com/publication/68036223?page=8"> 8 新闻：材料与工艺设备 News: Materials and processing equ</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 9" href="https://secure.viewer.zmags.com/publication/68036223?page=9"> 新闻：LEDs News: LEDs 9 聚灿光电订购Veeco 的EPIK 868 MOC</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 10" href="https://secure.viewer.zmags.com/publication/68036223?page=10"> 10 新闻：光通信 News: Optical communications 苹果公司向Fi</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 11" href="https://secure.viewer.zmags.com/publication/68036223?page=11"> 新闻：光通信 News: Optical communications 11 </a> <a title="Semiconductor Today Asia 2017-2018 (4) page 12" href="https://secure.viewer.zmags.com/publication/68036223?page=12"> 12 技术聚焦：光电探测器 减少硅片上铟镓磷的晶片弓曲 研究人员利用了应变工程没有影响位错密</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 13" href="https://secure.viewer.zmags.com/publication/68036223?page=13"> 技术聚焦：光电探测器 13 图2：InGaP晶片的晶片弓曲：x=0.49（a)， x=0.54</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 14" href="https://secure.viewer.zmags.com/publication/68036223?page=14"> 14 技术聚焦：传感器件 氮化硼的薄牺牲层能够将GaN 气体传感器转移到金属箔和 柔性聚合物上</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 15" href="https://secure.viewer.zmags.com/publication/68036223?page=15"> 特性而具有吸引力, 这些特性包括高 热稳定性和化学稳定性。 Ougazzaden还指导佐治亚理</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 16" href="https://secure.viewer.zmags.com/publication/68036223?page=16"> 16 技术聚焦：III-V族工艺 硅上的低阈值砷化铟量子点激光二极管 研究人员声称这在Si上生</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 17" href="https://secure.viewer.zmags.com/publication/68036223?page=17"> 技术聚焦：LED制造 23 Pick your size.</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 18" href="https://secure.viewer.zmags.com/publication/68036223?page=18"> 18 技术聚焦：III-V族工艺 </a> <a title="Semiconductor Today Asia 2017-2018 (4) page 19" href="https://secure.viewer.zmags.com/publication/68036223?page=19"> 技术聚焦：激光器 25 Guiding processing forward </a> <a title="Semiconductor Today Asia 2017-2018 (4) page 20" href="https://secure.viewer.zmags.com/publication/68036223?page=20"> 20 技术聚焦：LED制造 密歇根大学预测，在InGaN中掺 入硼可以提高大功率LED的效率 </a> <a title="Semiconductor Today Asia 2017-2018 (4) page 21" href="https://secure.viewer.zmags.com/publication/68036223?page=21"> 技术聚焦：LED制造 21 </a> <a title="Semiconductor Today Asia 2017-2018 (4) page 22" href="https://secure.viewer.zmags.com/publication/68036223?page=22"> 22 技术聚焦：LED制造 从发光二极管中去除蓝宝石 衬底而不破裂 钛/金平整层在激光剥离的</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 23" href="https://secure.viewer.zmags.com/publication/68036223?page=23"> 技术聚焦：LED制造 23 图2</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 24" href="https://secure.viewer.zmags.com/publication/68036223?page=24"> 24 市场聚焦: GaN HEMT器件 具有250GHz截止频率的硅 上氮化镓晶体管 成本降</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 25" href="https://secure.viewer.zmags.com/publication/68036223?page=25"> 图2. Xing等人的Si上GaN HEMT的fT与其他报道的在Si上和SiC上GaN HEMT的</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 26" href="https://secure.viewer.zmags.com/publication/68036223?page=26"> 26 市场聚焦: GaN HEMT器件 富士通在室温下结合单晶金刚石和SiC衬底， 提高GaNH</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 27" href="https://secure.viewer.zmags.com/publication/68036223?page=27"> 尽管SiC衬底具有相对较高的导热率, 但是对于具有越来越高的功率输出的 器件而言, 需要具有更好</a> <a title="Semiconductor Today Asia 2017-2018 (4) page 28" href="https://secure.viewer.zmags.com/publication/68036223?page=28"> www.semiconductor-today.com </a>